Article

Article title RESEARCH OF RECTIFIERS BASED ON NANOSCALE MOS DEVICES FOR MICROSYSTEMS WITH WIRELESS POWER SUPPLY
Authors B. G. Konoplev, A. S. Sinyukin
Section SECTION II. THE DESIGN OF THE CIRCUITRY
Month, Year 02, 2018 @en
Index UDC 621.382.3: 621.314
DOI 10.23683/2311-3103-2018-2-105-113
Abstract Nowadays wireless power transfer technology has become widespread. It is used in wireless sensor networks, ‘Internet of Things’, RFID and other applications. In many cases devices in such systems are passive, that is, they don’t have an internal power supply. Therefore passive microsystems generally receive energy needed for internal circuits operation through high-frequency or microwave radiation. Passive microwave microsystems can be implemented in a single chip form with a thin-film antenna located on the crystal surface. For conversion of microwave oscillation to DC voltage, rectifiers are applied. The most important characteristics of such devices are sensitivity, efficiency, operating frequency range, the possibility of increasing (multiplying) the input voltage up to the required level. The compatibility of the rectifier components with the technology of manufacturing the microsystem (usually CMOS technology) is especially important. Transient analysis of microwave energy (f = 2,45 GHz) conversion to DC voltage in multistage rectifiers-multipliers based on nanoscale MOSFETs is presented in this article. An analysis of the protocol of accumulation and consumption of energy in passive microsystem with a wireless power supply is performed. The conditions of combining the processes of accumulation and consumption of the collected energy depending on the ratio of the power coming from the antenna and the power consumed by the microsystem in the signal processing mode were determined. The results of transient simulation in voltage multipliers with number of stages from 1 to 8 implemented in CMOS 90, 65 and 45 nm technologies are presented. The simulation was carried out using Tanner EDA software environment, which uses the BSIM4 transistor model, taking into account the features of the subthreshold region of the voltage-current characteristics. The influence of threshold voltages, subthreshold currents and substrate on the output voltage of multistage rectifiers is considered. The results of the research can be useful in the design of microsystems with wireless supply.

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Keywords Internet of Things; RFID; wireless power transmission; rectifier; nanoscale MOSFETs; transient simulation.
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