APPLICATION OF ORTHOGONAL ORIENTED STRONG ELECTRIC AND MAGNETIC FIELDS TO CREATE FREQUENCY-CONVERTING DEVICES OF AUTODYNE TYPE
Abstract
In the framework of the drift-diffusion model of carrier transport in the bulk of III–V type
semiconductors, under external action of strong constant electric and magnetic fields orthogonally
oriented relative to each other, a new principle for applying the discovered effects is proposed, which
take into account the nonlinearities of the output parameters of the working chip, which leads to the
possibility creation of new semiconductor structures controlled by a magnetic field (SSCMF). Previously,
the diffusion component of the output current density was not taken into account as a separate
effect arising under the orthogonal action of strong electric and magnetic components, which was at
first time considered in this paper. It is shown that this component is a part of the inductive transverse
output current and can be considered as an independent effect. The proposed practical application
is based on the classical relations that describe the component spatial representation of the effective
mass energy dependence and the parameters of the kinetic equations for the carriers drift and
heating in the bulk of highly mobile III–V type semiconductors structures. (The energy dependence of
the reciprocal effective mass value was obtained under the assumption that this parameter becomes
heavier in the framework of the two-valley representation. However, the mechanism of such increasing
is not considered in detail, but is taken into account as a result of expansion in a Taylor series.)
At the same time, some new phenomena were also hypothetically discovered: a diffusion detector
effect and a transverse induction effect controlled by a magnetic field, similar in its manifestation to
the Gunn effect observed in this direction. The results obtained open the prospect for creating fundamentally
new frequency-converting devices based on the above SSCMF, such as autodyne-type converters
(mixers), one of the designs of which is also proposed in this work in a waveguide version. In
the case of experimental confirmation of the discovered effects, which can be investigated using the
block diagram of the measuring setup proposed in the work, we can conclude that there are promising
new applications of magnetically controlled semiconductor structures. In addition, equipment
developers will be interested in the possibility of using the magnetic field orientation angle to control
the output parameters of such structures as part of converters
References
kolebatel'nym konturom v tsepi pitaniya [The effect of autodyne detection in a Gunn diode oscillator
with a low-frequency oscillatory circuit in the power circuit], Radiotekhnika i elektronika [Radio
engineering and electronics], 1996, Vol. 46, No. 12, pp. 1497-1500.
2. Malyshev I.V., Fil K. A., Goncharova O.A. Determination of the Bulk Conductivity of III–V
Semiconductors in a Strong Constant Electric Field and under Harmonic Effects, Semiconductors,
2019, Vol. 53, No. 15, pp. 1979-1982.
3. Heinrich H., Keeler W. Gunn Effect Threshold and Domain Formation in Transverse Magnetic
Fields in Indium Antimonide, Applied Physics Letters, 1972, No. 4, pp. 171-172.
4. Peter Y.Yu. Manuel Cardona. Fundamentals of Semiconductors: Physics and Materials Properties.
Berlin, Heidelberg: Springer, 2010, 793 p.
5. Levinshtein M.E., Nasledov D.N., Shur M.S. Magnetic Field Influence on the Gunn Effect, PSS
B, 1969, No. 2, pp. 897-903.
6. Malyshev I.V., Osadchiy E.N., Goncharova O.A. Razrabotka chastotnykh preobrazovateley,
ispol'zuyushchikh dreyfovye i diffuzionnye ob"emnye nelineynosti v usloviyakh deystviya
vneshnikh sil'nykh elektricheskikh i magnitnykh poley [Development of frequency converters
using drift and diffusion volumetric nonlinearities under the action of external strong electric
and magnetic fields], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences],
2018, No. 2, pp. 126-142.
7. Koronovskiy A.A., Khramov A.E., Moskalenko O.I. i dr. Issledovanie vliyaniya sluchaynykh
fluktuatsiy kontsentratsii legiruyushchey primesi na tok v poluprovodnikovykh sverkhreshetkakh
[Investigation of the influence of random fluctuations of the dopant concentration on the current
in semiconductor superlattices], Mater. 22-y Mezhdunarodnoy Krymskoy konferentsii "SVChtekhnika
i tele-kommunikatsionnye tekhnologii" (KryMiKo'2012), Sevastopol, Crimea. [Materials
of the 22nd International Crimean Conference "Microwave Engineering and Telecommunication
Technologies" (KryMiKo'2012), Sevastopol, Crimea, 2012], pp. 183-184.
8. Malyshev I.V., Osadchiy E.N., Fil' K.A. Sposoby ucheta energozavisimosti effektivnoy massy
goryachikh nositeley v ob"eme poluprovodnikov tipa AIIIBV dlya razlichnykh sluchaev
dispersii [Methods for taking into account the energy dependence of the effective mass of hot
carriers in the volume of AIIIBV type semiconductors for various cases of dispersion],
Inzhenernyy vestnik Dona [Engineering journal of Don], 2017, No. 4, Available at:
ivdon.ru/magazine/archive/n4y2017/4396.
9. Malyshev I.V., Goncharova O.A. Issledovanie sobstvennoy KVCh provodimosti
poluprovodnikov [Study of intrinsic EHF conductivity of semiconductors], Nauka i obrazovanie
na rubezhe tysyacheletiy: Sb. nauchno-issledovatel'skikh rabot [Science and education at the turn
of the millennium: Collection of research papers], 2018, Issue 1, pp. 168-174.
10. Malyshev I.V., Fil K.A., Parshina N.V. Nonlinearity of the Diffusion Coefficient of Hot Carriers
in the Bulk of the Semiconductor under the Action of Electric and Magnetic Fields, Russian
Physics Journal, 2017, Vol. 6, No. 3, pp. 923-927.
11. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak. Effective Electron Mass in Low-
Dimensional Semiconductors, Series in Materials Science. Berlin, Heidelberg: Springer, 2013,
Vol. 167, 535 p.
12. Fischetti M.V., Vandenberghe W.G. Advanced Physics of Electron Transport in Semiconductors
and Nanostructures. Switzerland: Springer International Publishing, 2016, 474 p.
13. Malyshev I.V., Goncharova O.A., Fedotov А.А. Comparative Analysis of Charge Carriers Effective
Mass Energy Dependences in the Various Semiconductors under Conditions of Strength and
Extra Strength Electric External Fields Action, Proceedings of 2021 Radiation and Scattering of
Electromagnetic Waves (RSEMW) – 2021, Divnomorskoe, Russia, pp. 125- 128.
14. Malyshev I.V., Goncharova O.A. The Possibility of Creating a New Class of Frequency Converting
Devices Based on The Bulk of AIIIBV Type Semiconductor Structures with Parameters
Controlled by Strong Electric and Magnetic Fields, Proceedings of 2019 International
Conference on Radiation Scattering of Electromagnetic Waves (RSEMW), 2019,
Divnomorskoye, Krasnodar Region, Russia, pp. 188-191.
15. Sungjung Joo, Taeyueb Kim, Sang Hoon Shin, et al. Magnetic-field-controlled Reconfigurable
Semiconductor Logic, Nature, 2013, Vol. 494, pp. 72-76.
16. Malyshev I.V., Fil K.A., Parshina N.V. The Dependence of the Diffusion Coefficient in Semiconductor
Materials under the Influence of the External Strong Magnetic and Electric Fields,
Materials of 2017 International Conference on Physics and Mechanics of New Materials and
Their Applications –2017, Jabalpur, India, pp. 142-143.
17. Trovato M., Reggiani L. Maximum Entropy Principle within a Total Energy Scheme: Application
to Hot-Carrier Transport in Semiconductors, Physical Review, 2000, Vol. 61, No. 24,
pp. 16667-16681.
18. Fromhold T.M., Krokhin A.A., Wilkinson P.B., et al. Chaotic Quantum Transport in
Superlattices, UFN, 2001, 44:10 suppl, pp. 24-27.
19. Fowler D., Hardwick D., Patanè A. et al. Magnetic-Field-Induced Miniband Conduction in
Semiconductor Superlattices, Physical Review, 2007, Vol. 76, No. 24, pp. 245303.
20. Sel'skiy A.O., Koronovskiy A.A., Moskalenko O.I. i dr. Vliyanie mezhminizonnogo
tunelirovaniya na generatsiyu toka v poluprovodnikovoy sverkhreshetke [Influence of
interminiband tunneling on current generation in a semiconductor superlattice], Zhurnal
tekhnicheskoy fiziki [Journal of Technical Physics], 2015, Issue 4, pp. 62-66.
21. Malyshev I.V., Parshina N.V., Goncharova O.A. Behavior of Bulk Semiconductor Structures
and Superlattices Output Parameters under the Influence of Strong External Constant and Alternative
Electric Fields, Proceedings of 10th Anniversary International Conference on "Physics
and Mechanics of New Materials and Their Applications" (PHENMA 2021–2022)
Divnomorsk, Russia, May 23–27, 2022, pp. 192-193.
