RESISTIVE STRUCTURES BASED ON SILICON-CARBON FILMS FOR GAS SENSORS APPLICATION
Abstract
The paper presents the results of work on the development of resistive structures of sensor
elements based on silicon-carbon films, which according to the literature data have high stability.
Silicon-carbon films were prepared by electrochemical deposition from a solution of
hexamethyldisilazane with methanol in a ratio of 1:9. Two types of structures were used as substrates
for the manufacture of resistive sensor structures: a dielectric substrate with a high resistance
chromium sublayer and a dielectric substrate with a copper sublayer in the form of a
group of thin slits. Silicon-carbon films were deposited on the surface at a current density of 50
mA / cm2. In this case, the deposition time on the substrate of polycor with a high resistance
chromium sublayer was 30 minutes, and on the dielectric substrate with a copper sublayer in the
form of a group of thin slits-4 hours. The structure of the obtained samples was studied using the
method of Raman spectroscopy. It is shown that silicon-carbon films have a complex structure
including various phases of silicon carbide, graphite and diamond. Gas sensing properties of sensor
elements was evaluated against carbon monoxide and methane with concentrations of 16 and
297 ppm, respectively at operating temperature of 200°C. was studied electrophysical characteristics
of RC structures by voltammetry as well as by Mott –Schottky, allowing to estimate the conductivity
type of silicon-carbon films composed of designed RC structures. It was determined that
the resistive structures of both types demonstrate p-type conductivity at room temperature, and the
resistive structure on a dielectric substrate with a copper sublayer changes the type of conductivity
when heated to 200 ℃ from p to n.
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