THE USE OF STRONG CONSTANT MAGNETIC AND ELECTRIC FIELDS TO CREATE A NEW TYPE OF BULK SEMICONDUCTOR CONVERTER UNITS
Abstract
Based on the analysis of the main dispersion-dependent mechanisms describing the behavior
of the effective mass under the action of strong electric fields (EF) in the volume of AIIIBV –
type semiconductors, a generalized relation is obtained for the dependence of this charge carriers
effective mass on energy. Further application of this relation in the phenomenological theory for
the drift-diffusion model including the heating and drift equations, as well as when the action of a
strong magnetic field is orthogonal with respect to the drift direction, made it possible to represent
all the relations in component form for the longitudinal and transverse coordinates. This idea
made it possible to identify a number of new effects, among which the most significant are the following:
from the obtained frequency response and phase response of the output conductivity of a particular
volumetric structure, it was found that it is possible to select the required constant field strength
value that provides the required mode of operation of devices on such structures in a given frequency
range; with increasing magnetic field (MF) induction, an increase in the velocity value occurs along
the drift direction, and then falling sections appear on the drift induction characteristic in the transverse
direction, which indicates the possibility of using this effect to create nonlinear induction active
elements; the amplitude dependences of constant and variable diffusion coefficients were found,
which can be defined as the “volume diffusion detector effect”. It was also revealed for the first time
that the components of the drift velocity and the diffusion coefficient along the longitudinal axis of the
drift direction do not depend on the transverse MF, but are determined only by the longitudinal EF
along this direction, and the transverse component of the drift velocity at strong values of the MF
induction B>4 T, shows a shift the beginning of the falling section on the drift (current-voltage)
characteristic decreases (by 2 times), which indicates the discovered new "Gunn effect controlled by
the magnetic field." In this case, a decrease in the value of the threshold field strength of the Gunn
effect from 4 to 2 KV / cm will increase the efficiency of the volume diode by 50 %. The fundamental
possibility of creating two-dimensional devices for frequency conversion (autodyne type mixers)
and magnetically sensitive detectors has been revealed.
References
poluprovodnikov s peremennoy effektivnoy massoy nositeley zaryada v sverkhreshetkakh i v
pri-borakh na ikh osnove [Method of analysis of microwave nonlinear processes in the volume
of semiconductors with variable effective mass of charge carriers in superlattices and in solutions
based on them], Izvestiya VUZov. Elektronika [Proceedings of Universities. Electronics],
1999, No. 4, pp. 3-10.
2. Malyshev V.A. Teoriya razogrevnykh nelineynostey plazmy tverdogo tela [Theory of heating nonlinearities
of solid-state plasma]. Rostov-on-Don: Izd-vo Rostovskogo universiteta, 1979, 264 p.
3. Askerov B.M. Kineticheskie effekty v poluprovodnikakh [Kinetic effects in semiconductors].
Leningrad: Nauka, 1970, 248 p.
4. Ruch J.G., Kino G.S. Transport properties of GaAs, Phys. Rev., 1968, Vol. 174, No. 3,
pp. 921-931.
5. Malyshev I.V., Osadchiy E.N., Fil' K.A. Sposoby ucheta energozavisimosti effektivnoy massy
goryachikh nositeley v ob"eme poluprovodnikov tipa AIIIBV dlya razlichnykh sluchaev dispersii
[Methods for accounting for the energy dependence of the effective mass of hot carriers in the volume
of AIIIBV type semiconductors for various cases of dispersion], Inzhenernyy vestnik Dona
[Don's engineering Bulletin], 2017, No. 4. Available at: http://ivdon.ru/magazine/archive/
n4y2017/4396.
6. Malyshev I.V., K.A. Fil, N.V. Parshina. Methods of the Dispersion Type Accounting on Output
Parameters of АIIIBV Type Semiconductors in Strong Electric Fields, Materials of 2017 International
Conference on Physics and Mechanics of New Materials and Their Applications
(PHENMA 2017), Jabalpur, India, 2017, pp. 167-168.
7. Pushkarev V.P. i dr. Impul'snyy SVCh-generator na diode Ganna [Pulsed microwave generator
on a Gann diode], Elektronnaya tekhnika. Seriya 1: SVCh-tekhnika [Electronics. Series 1:
Microwave technology], 2010, No. 3, pp. 38-46.
8. Usanov D.A. i dr. Effekt avtodinnogo detektirovaniya v generatore na diode Ganna s
nizkochastotnym kolebatel'nym konturom v tsepi pitaniya [The effect of autodyne detection in
a generator on a Gann diode with a low-frequency oscillatory circuit in the power supply
chain], Radiotekhnika i elektronika [Radio engineering and electronics], 1996, Vol. 46,
No. 12,.pp. 1497-1500.
9. Popov V.V. Stabilizatsiya chastoty generatorov na diodakh Ganna millimetrovogo diapazona
dlin voln [Stabilization of the frequency of generators on Gann diodes of the millimeter wavelength
range], Izvestiya vuzov. Radioelektronika [Izvestiya Vysshikh Uchebnykh Zavedenii.
Radioelektronika], 2009, No. 1, pp. 67-71.
10. Shur M. Sovremennye pribory na osnove arsenida galliya [Modern devices based on gallium
arsenide]: transl. from engl. Moscow: Mir, 1991, 632 p.
11. Malyshev V.A. Bortovye aktivnye ustroystva sverkhvysokikh chastot [On-Board active devices
of ultrahigh frequencies]. Leningrad: Sudostroenie, 1990, 264 p.
12. Malyshev I.V., Fil K.A., Goncharova O.A. Study of the Frequency and Phase Response of
Small-Signal Conductivity of Bulk Semiconductors with Hot Carriers in Direct and Alternating
Electric Fields, 2017 International Conference on «Physics and Mechanics of New Materials
and There Applications» (PHENMA 2017), Jabalpur, India, зз. 164-165.
13. Malyshev Igor V., Goncharova Olga A. The Possibility of Creating a New Class of Frequency
Converting Devices Based on The Bulk of АIIIBV Type Semiconductor Structures With Parameters
Controlled by Strong Electric and Magnetic Fields, 2019 International Conference on
«Radiation and Scattering of Electromagnetic Waves» June 24-28. Divnomorskoye, Krasnodar
Region, Russiaб pp. 188-191.
14. Malyshev I.V., Fil' K.A., Goncharova O.A. Opredelenie komponent ob"emnoy provodimosti
poluprovodnikov tipa AIIIBV v sil'nykh postoyannykh elektricheskikh polyakh pri
garmonicheskom vozdeystvii [Determination of the volume conductivity components of
AIIIBV type semiconductors in strong permanent electric fields under harmonic influence],
Izvestiya VUZov. Elektronika [Proceedings of Universities. Electronics], 2019, Vol. 24, No. 1,
pp. 7-15.
15. Malyshev I.V., Osadchiy E.N., Fil' K.A. Sposoby upravleniya indutsirovannoy dreyfovoy
kharakteristikoy goryachikh nositeley vneshnim magnitnym polem i ego orientatsiey
otnositel'no elektricheskogo [Methods for controlling the induced drift characteristic of hot
carriers by an external magnetic field and its orientation relative to the electric field],
Mezhdunarodnyy issledovatel'skiy zhurnal «Uspekhi sovremennoy nauki» [International research
journal "Successes of modern science"], 2016, Vol. 8, No. 12, pp. 26-29.
16. Malyshev I.V., Radchenko A.F., Rozdobud'ko V.B. Rabota diodov Ganna na nerezonansnuyu
nagruzku [Work of Gann diodes on non-resonant load], Izvestiya vuzov. Radioelektronika
[Izvestiya Vysshikh Uchebnykh Zavedenii. Radioelektronika], I987, Vol. 30, No. 1, pp. 15-20.
17. Peter Y.Yu, Manuel Cardona. Fundamentals of semiconductors. Physics and materials properties.
Springer, 2010, 793 p.
18. Malyshev I.V., Fil' K.A., Parshina N.V. Nelineynost' koeffitsienta diffuzii goryachikh nositeley
v ob"eme poluprovodnika pod deystviem elektricheskogo i magnitnogo poley [Nonlinearity of
the diffusion coefficient of hot carriers in the semiconductor volume under the action of electric
and magnetic fields], Izvestiya VUZov. Fizika [Proceedings of Universities. Physics], 2017,
No. 6, pp. 3-6.
19. Krotov V.I., Malyshev I.V. Fenomenologicheskaya teoriya diffuzionnykh svoystv nositeley
zaryada v sverkhreshetkakh i poluprovodnikakh s proizvol'nym zakonom dispersii [Phenomenological
theory of diffusion properties of charge carriers in superlattices and semiconductors
with an arbitrary law of dispersion], Elektronnaya tekhnika. Ser. 6: Materialy [Electronics. Series:
Materials], 1984, Issue 1 (186), pp. 42-45.
20. Malyshev I.V., Fil K.A., Goncharova A.A. The Behavior Analysis of the Current Density Hot
Carriers Variable Component in Semiconductors of АIIIBV Type, 2017 International Conference
on «Physics and Mechanics of New Materials and There Applications» (PHENMA 2017),
Jabalpur, India, pp. 166-167.
21. Malyshev I.V., Parshina N.V. Uchet vliyaniya diffuzionnoy komponenty toka goryachikh
nositeley v vykhodnoy ob"emnoy provodimosti sovremennykh poluprovodnikovykh struktur
[Accounting for the influence of the diffusion component of the hot carrier current in the output
volume conductivity of modern semiconductor structures], Nauchnyy zhurnal KubGAU [Scientific
Journal of KubSAU], 2017, No. 134 (10), pp. 1-6. Available at: http://ej.kubagro.ru/2017/
10/pdf/79.pdf.
22. Malyshev I.V., Fil' K.A., Goncharova O.A. Analiz chastotnykh kharakteristik parametrov
ob"emnoy provodimosti poluprovodnikov tipa AIIIBV v sil'nykh elektricheskikh polyakh
[Analysis of frequency characteristics of volume conductivity parameters of AIIIBV type semiconductors
in strong electric fields], Nauka i obrazovanie na rubezhe tysyacheletiy: Cb.
nauchno-issledovatel'skikh rabot [Science and education at the turn of the Millennium: Collection
of research papers]. Issue 1. Kislovodsk, 2017, pp. 140-144.
