SIMULATION AND ANALYSIS OF THE STRESS-STRAIN STATE OF A PRESSURE SENSOR’S ELASTIC MEMBRANE BASED ON “SILICON ON SAPPHIRE” STRUCTURE
Abstract
High accuracy and improved performance of pressure sensors are essential to ensure safety, quality and efficiency in various industries and machinery. The use of the finite element method (FEM) in the design of pressure sensors makes it possible to improve their accuracy due to a deeper analysis of mechanical and physical processes that arise when exposed to pressure loads. The purpose of this work is to build an accurate three-dimensional model of the sensitive element of the pressure sensor and to analyze the stress-strain state of the elastic membrane under the load from 0 to 15 MPa. The main tasks of the work: research of the properties and parameters of materials used as part of the sensitive element of the pressure sensor based on the structure “silicon on sapphire”; obtaining the values of the maximum equivalent stress arising in the design of the elastic membrane of the sensitive element under the influence of a pressure load of 125% of the nominal value; distribution of radial and tangential deformations of the elastic membrane and determination of the best location of resistance strain gauges on the surface of pressure sensor’s sensitive element. As a result of the research, it was found that the materials used have good resistance to an aggressive environment, as well as the ability to work in a wide temperature range and under high pressure loads. Based on the simulation results, the value of the maximum equivalent stress was determined, the stress value does not exceed the ultimate strength of the sensitive membrane, the distribution of radial and tangential deformations on the surface of the sensitive element was obtained, which makes it possible to determine the most optimal pattern of the resistance stain gauge bridge circuit.
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