SIGE BICMOS OUTPUT STAGES OF HIGH-TEMPERATURE OPERATIONAL AMPLIFIERS
Abstract
Development and design of silicon-germanium (SiGe) analog functional units (operational amplifiers, output stages, etc.) is one of the urgent tasks in modern microelectronics. The use of the combined technological process of SiGe BiCMOS makes it possible to combine in a single integrated circuit the advantages of complementary CMOS triansistors (low power consumption and high integration density) and bipolar heterojunction transistors (HBT) n-p-n type (the ability to operate at high frequencies, low power consumption and, as a result, low intrinsic heat dissipation, high gain, high performance, increased reliability, relatively low cost). To create a micro-power analog component base operating at high temperatures (up to + 250 degrees Celsius), it is necessary to develop special SiGe BiCMOS circuit solutions that take into account the process limitations on the use of certain types of transistors. Four modifications of buffer amplifiers for application as output stages of operational amplifiers, which are oriented to SiGe BiCMOS technological process, are investigated. A program for cataloging and visualization of the considered circuits is developed, which differ from each other by the values of input and output resistances, static current consumption, circuitry of static mode establishment circuits, maximum amplitudes of positive and negative output voltages, etc. Examples of computer simulation of static modes and amplitude characteristics in the Cadence electronics and microelectronics design environment at two temperatures of + 27 and + 250 degrees Celsius are given. The proposed circuit design solutions are recommended for practical use in microelectronic devices operating at elevated temperatures
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