MODELING THE ELECTRIC FIELD OF A SILICON N-I-P NANOSTRUCTURE
Abstract
Distribution of ionized impurities, electrons, holes determines the structure, physical properties, performance characteristics of semiconductor devices. The role of surface electron states is negative, the degree of their influence on the characteristics of the device depends on the features of the structure. Reducing the size of semiconductor devices is a modern trend in improving electronics. The influence of surface states on the properties of nanoscale objects increases with decreasing size. The object of the study is the electric field of a silicon n-i-p nanostructure. The purpose of the study is to analyze the influence of surface states on the internal electric field of a silicon n-i-p nanostructure. Research objectives: 1 – Calculate numerically, taking into account the surface states, the potential and electric field strength, the concentration of donors and acceptors in a silicon n-i-p nanostructure with a diffusion doping profile. 2 – Determine the influence of the thickness of the n-i-p nanostructure and the density of surface states on the potential and electric field strength. 3 – Determine the composition of the space charge region of the n-i-p nanostructure with the minimized influence of surface states. The calculation method is based on the numerical solution of the Poisson equation taking into account the surface states and boundary conditions, including the condition of the general electroneutrality of the sample. As a result, the distributions of the potential and electric field strength were obtained for different values of the nanostructure thickness and the density of surface states. It is shown that charged surface states change the potential and electric field strength not only in the surface region, but also in the volume of the nanostructure. The value of the strength in the base increases with decreasing thickness, this value decreases if the density of surface states exceeds 1013 cm–2. Reducing the density of surface states to 1012 cm–2 eliminates the surface potential barrier created by them. The space charge region consists of 5 parts: a region of positive charge created by ionized donors, a region enriched in electrons, a region depleted in charge carriers, a region enriched in holes, and a region of negative charge created by ionized acceptors
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