FORMATION AND INVESTIGATION OF DOPED ZINC OXIDE MEMRISTIVE FILMS FOR MACHINE VISION SYSTEMS OF ROBOTIC COMPLEXES
Abstract
The results of investigation of the influence of synthesis modes of doped zinc oxide thin films by pulsed laser deposition on their morphological and electrophysical characteristics are presented. Experimental studies of the influence of dimensional effects on the parameters of resistive switching of memristor structures based on thin films of doped zinc oxide have been carried out. The relationship between the morphological parameters of the films, their thickness and resistive switching characteristics has been established. The results showing how thickness, surface roughness and average grain diameter influence the ratio of resistance in the high-resistance and low-resistance states, as well as the switching voltages Uset and Ures have been obtained. It is shown that an increase in the thickness of gallium-doped zinc oxide films leads to an increase in the Uset and Ures voltages, while the dependence of the resistance ratio in the high-resistance and low-resistance states has a complex character, with a maximum observed at a film thickness of about 30 nm. The obtained results allow us to estimate the degree of influence of structural and morphological parameters of doped zinc oxide films on the resistive switching effect in them, and also to formulate recommendations for obtaining these films with the required resistive switching parameters. It was found that increasing the thickness of gallium-doped zinc oxide films from 11.8±5.1 nm to 55.1±18.4 nm it is possible to change the value of charge carriers concentration from (2.84±0.22)∙1019 cm-3 to (1.42±0.13)∙1020 cm-3, as well as the mobility of charge carriers from 54.48±4.07 cm2/(V∙s) to 18.77±0.83 cm2/(V∙s). At the same time, increasing the thickness of gallium-doped zinc oxide films also leads to an increase in resistance in the high-resistance state from 1.38±0.11 MΩ to 62.59±5.4 MΩ and resistance in the low-resistance state from 0.005±0.001 MΩ to 0.041±0.002 MΩ. The results obtained can be used in the development of physical principles of creation of electronic component base of artificial intelligence systems for manufacturing new devices and devices of nanoelectronics and adaptive neuromorphic systems
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