Skip to main content Skip to main navigation menu Skip to site footer
##common.pageHeaderLogo.altText##
Izvestiya SFedU
Engineering sciences
  • Current
  • Previous issues
    • Archive
    • Issues 1995 – 2019
  • Editorial Board
  • About journal
    • Officially
    • The main tasks
    • Main sections
    • Specialties of the Higher Attestation Commission of the Russian Federation
    • Editor-in-Chief
ISSN 1999-9429 print
ISSN 2311-3103 online
  • Login
  1. Home /
  2. Search

Search

Advanced filters
Published After
Published Before

Search Results

Found one item.
  • APPLICATION OF ORTHOGONAL ORIENTED STRONG ELECTRIC AND MAGNETIC FIELDS TO CREATE FREQUENCY-CONVERTING DEVICES OF AUTODYNE TYPE

    I.V. Malyshev, N.V. Parshina, А.А. Okhotnikova
    2023-06-07
    Abstract ▼

    In the framework of the drift-diffusion model of carrier transport in the bulk of III–V type
    semiconductors, under external action of strong constant electric and magnetic fields orthogonally
    oriented relative to each other, a new principle for applying the discovered effects is proposed, which
    take into account the nonlinearities of the output parameters of the working chip, which leads to the
    possibility creation of new semiconductor structures controlled by a magnetic field (SSCMF). Previously,
    the diffusion component of the output current density was not taken into account as a separate
    effect arising under the orthogonal action of strong electric and magnetic components, which was at
    first time considered in this paper. It is shown that this component is a part of the inductive transverse
    output current and can be considered as an independent effect. The proposed practical application
    is based on the classical relations that describe the component spatial representation of the effective
    mass energy dependence and the parameters of the kinetic equations for the carriers drift and
    heating in the bulk of highly mobile III–V type semiconductors structures. (The energy dependence of
    the reciprocal effective mass value was obtained under the assumption that this parameter becomes
    heavier in the framework of the two-valley representation. However, the mechanism of such increasing
    is not considered in detail, but is taken into account as a result of expansion in a Taylor series.)
    At the same time, some new phenomena were also hypothetically discovered: a diffusion detector
    effect and a transverse induction effect controlled by a magnetic field, similar in its manifestation to
    the Gunn effect observed in this direction. The results obtained open the prospect for creating fundamentally
    new frequency-converting devices based on the above SSCMF, such as autodyne-type converters
    (mixers), one of the designs of which is also proposed in this work in a waveguide version. In
    the case of experimental confirmation of the discovered effects, which can be investigated using the
    block diagram of the measuring setup proposed in the work, we can conclude that there are promising
    new applications of magnetically controlled semiconductor structures. In addition, equipment
    developers will be interested in the possibility of using the magnetic field orientation angle to control
    the output parameters of such structures as part of converters

1 - 1 of 1 items

links

For authors
  • Submit article
  • Author Guidelines
  • Editorial Policy
  • Reviewing
  • Ethics of scientific publications
  • Open access policy
  • Supporting documents
Language
  • English
  • русский

journal

* not an advertisement

index

Индексация журнала
* not an advertisement
Information
  • For Readers
  • For Authors
  • For Librarians
Address: 347900, Taganrog, Chekhov St., 22, A-211 Phone: +7 (8634) 37-19-80 E-mail: iborodyanskiy@sfedu.ru
Publication is free
More information about the publishing system, Platform and Workflow by OJS/PKP.
logo Developed by RDCenter