APPLICATION OF ORTHOGONAL ORIENTED STRONG ELECTRIC AND MAGNETIC FIELDS TO CREATE FREQUENCY-CONVERTING DEVICES OF AUTODYNE TYPE

Abstract

In the framework of the drift-diffusion model of carrier transport in the bulk of III–V type semiconductors, under external action of strong constant electric and magnetic fields orthogonally oriented relative to each other, a new principle for applying the discovered effects is proposed, which take into account the nonlinearities of the output parameters of the working chip, which leads to the possibility creation of new semiconductor structures controlled by a magnetic field (SSCMF). Previously, the diffusion component of the output current density was not taken into account as a separate effect arising under the orthogonal action of strong electric and magnetic components, which was at first time considered in this paper. It is shown that this component is a part of the inductive transverse output current and can be considered as an independent effect. The proposed practical application is based on the classical relations that describe the component spatial representation of the effective mass energy dependence and the parameters of the kinetic equations for the carriers drift and heating in the bulk of highly mobile III–V type semiconductors structures. (The energy dependence of the reciprocal effective mass value was obtained under the assumption that this parameter becomes heavier in the framework of the two-valley representation. However, the mechanism of such increasing is not considered in detail, but is taken into account as a result of expansion in a Taylor series.) At the same time, some new phenomena were also hypothetically discovered: a diffusion detector effect and a transverse induction effect controlled by a magnetic field, similar in its manifestation to the Gunn effect observed in this direction. The results obtained open the prospect for creating fundamentally new frequency-converting devices based on the above SSCMF, such as autodyne-type converters (mixers), one of the designs of which is also proposed in this work in a waveguide version. In the case of experimental confirmation of the discovered effects, which can be investigated using the block diagram of the measuring setup proposed in the work, we can conclude that there are promising new applications of magnetically controlled semiconductor structures. In addition, equipment developers will be interested in the possibility of using the magnetic field orientation angle to control the output parameters of such structures as part of converters