ТЕХНОЛОГИЯ ИЗГОТОВЛЕНИЯ ЧУВСТВИТЕЛЬНЫХ ЭЛЕМЕНТОВ ДАТЧИКОВ ДАВЛЕНИЯ НА ОСНОВЕ СПАЯ САПФИР – СТЕКЛОВИДНЫЙ ДИЭЛЕКТРИК – КЕРАМИКА
Ключевые слова:
Датчик давления, тензочувствительный элемент, кремний на сапфире, спаивание, керамика
Аннотация
Высокие требования, предъявляемые к тензометрическим преобразователям давления, а
именно: надёжность, качество, точность измерения, возможность работы в экстремальных
условиях и устойчивость к агрессивной среде, создают сегодня ряд проблем, решение которых
является объектом исследования данной статьи. Основными проблемами при достижении
целевых показателей являются: высокая стоимость исходных изделий, трудоёмкость техноло-
гического процесса в серийном производстве, а также ограничения, влияющие на точность и
надёжность показателей исходных устройств, в зависимости от условий эксплуатации.
Для решения данных проблем и улучшения физико-механических показателей чувствительных
элементов датчиков давления в статье рассмотрены следующие задачи: разработка конст-
рукции тензочувствительного элемента на основе структуры «кремний на сапфире» (КНС),
исследование способа его соединения с керамическим корпусным элементом и отработка тех-
нологического маршрута изготовления структуры спая сапфир – стекловидный диэлектрик –
керамика. Датчик давления, выполненный на основе структуры КНС обладает высокой чувст-
вительностью, стабильностью, практически не имеет механического гистерезиса и может
работать в широком диапазоне температур от –60 до +350°С при воздействии радиации.
В свою очередь, использование керамического основания позволяет уменьшить температурную
погрешность датчика ввиду лучшего согласования коэффициента линейного термического
расширения (КЛТР) керамики (85–100×10-7 К-1) и сапфировой подложки (60–75×10-7 К-1), а
также уменьшить стоимость технологического процесса из-за использования керамики вме-
сто дорогостоящих титановых сплавов и сложной металлообработки. Таким образом, струк-
тура «сапфир – стекловидный диэлектрик – керамика» показывает возможность повышения
чувствительности датчика и снижения погрешности при расширении его функциональных
возможностей, упрощении конструкции и повышении технологичности изготовления
Литература
1. Skvortsov P.A. Razrabotka metodiki rascheta i proektirovaniya uprugogo elementa
tenzodatchika na strukture «kremniy na sapfire»: diss. … kand. tekh. Nauk [Development of a
method for calculating and designing an elastic element of a strain gauge on the structure "silicon
on sapphire": cand. of eng. sc. diss.]: 01.02.06. Moscow: Moskovskiy politekhnicheskiy
universitet, 2019.
2. Khoshev A.V. Tenzorezistivnye plenki i ikh primenenie v datchikakh davleniya [Tensoresistive
thin films and their use in pressure sensors], Sovremennaya tekhnika i tekhnologii [Modern
technics and technologies], 2014, No. 10.
3. Mikhaylov P.G., Mokrov E.A., Sergeev D.A., Skotnikov V.V., Petrin V.A., Chernetsov M.A.
Chuvstvitel'nye elementy vysokotemperaturnykh datchikov davleniya. Materialy i tekhnologii
izgotovleniya [Sensitive elements of high- pressure sensors. Materials and technologies
izgogovleniya], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences],
2014, No. 4 (153), pp. 204-213.
4. Ustinov A.A., Nagornov Yu.S., Kozlov A.I. Sravnitel'nye kharakteristiki odnosloynykh i
dvukhsloynykh tenzopreobrazovateley davleniya na osnove struktur kremniy–na–sapfire [Comparative
characteristics of single-layer and double-layer pressure transducers based on silicon-onsapphire
structures], Izvestiya vysshikh uchebnykh zavedeniy. Materialy elektronnoy tekhniki
[Izvestiya vysshykh uchebnykh zavedeniy. Materialy electronnoy tekhniki], 2012, No. 1, pp. 66-67.
5. Konovalov R.S., L'vov A.A. Vysokotemperaturnye datchiki davleniya [High temperature pressure
sensors], Tr. mezhdunarodnogo simpoziuma "Nadezhnost' i kachestvo" [International
Sympozium "Reliability and quality"], 2014, Vol. 2, pp. 48-50.
6. Gurin S.A., Pecherskaya E.A., Zinchenko T.O., Fimin A.V., Nikolaev K.O. Konstruktsii i
tekhnologicheskie rezhimy formirovaniya chuvstvitel'nykh elementov mikroelektronnykh
datchikov bystroperemennogo i staticheskogo davleniya [Structures and technological regimes
of forming sensitive elements of microelectronic sensors of fast alternating and static pressure],
Izmerenie. Monitoring. Upravlenie. Kontrol' [Measuring. Monitoring. Management.
Control], 2019, No. 3 (29), pp. 111-118.
7. Mikhaylov P.G., Smogunov V.V., Vol'nikov M.I. Tekhnologii formirovaniya geterostruktur
izmeritel'nykh preobrazovateley [Technologies for heterostruktures formation of transducer],
Izvestiya vysshikh uchebnykh zavedeniy. Povolzhskiy region. Tekhnicheskie nauki [University
proceedings. Volga region. Technical sciences], 2020, No. 3 (55), pp. 58-67.
8. Shokorov V.A., Smirnov I.I. Razrabotka i primenenie vysokotemperaturnykh datchikov
davleniya dlya reaktivnykh dvigateley raketno-kosmicheskoy tekhniki [Development and application
of high-temperature pressure sensors for jet engines of rocket and space technology],
Tr. mezhdunarodnogo simpoziuma "Nadezhnost' i kachestvo" [International Sympozium "Reliability
and quality"], 2018, Vol. 2, pp. 60-62.
9. Berlin E.V., Seydman L.A. Poluchenie tonkikh plenok reaktivnym magnetronnym raspyleniem
[Preparation of thin films by reactive magnetron sputtering]. 2nd ed., corr. and suppl. URSS,
2022, 316 p. ISBN 978-5-9710-9680-1.
10. Vasil'ev V.A., Khoshev A.V. Primenenie magnetronnogo raspyleniya dlya polucheniya tonkikh
plenok geterogennykh struktur nano- i mikroelektromekhanicheskikh sistem [Application of
magnetron sputtering to obtain thin films of heterogeneous structures of nano- and
microelectromechanical systems], Fundamental'nye problemy radioelektronnogo
priborostroeniya [Fundamental problems of radio-electronic instrumentation], 2014, Vol. 14,
No. 3, pp. 144-147.
11. Goncarov E, Saaenko A., Malyukov S., Palii A. Formation of ITO Thin Films by MF Magnetron
Sputtering for Solar Cells Application, Processing of ITNT 2021 – 7th IEEE International
Conference on Information Technology and Nanotechnology, 2021.
12. Danilina T.I., Troyan P.E., Sakharov Yu.V., Zhidik Yu.S. Ionno-plazmennye metody polucheniya
nanostruktur [Ion-plasma methods to obtain nanostructures], Doklady Tomskogo
gosudarstvennogo universiteta sistem upravleniya i radioelektroniki [Proceedings of TUSUR
University], 2017, Vol. 20, No. 3, pp. 40-45.
13. Kolobov N.A., Shelegeda E.V. Issledovanie poperechnoy provodimosti plenok
polikristallicheskogo kremniya, poluchennykh metodom magnetronnogo raspyleniya [Investigation
of the transverse conductivity of polycrystalline silicon films obtained by magnetron
sputtering], Kratkie soobshcheniya po fizike FIAN [Bulletin of the Lebedev Physics Institute],
2012, No. 5, pp. 28-37.
14. Klimovich I.M., Romanov I.A., Komarov F.F., Zaykov V.A., Vlasukova L.A, Osin Yu.N., Rogov
A.M., Vorob'ev V.V., Stepanov A.L. Osobennosti formirovaniya tonkikh plenok kremniya,
osazhdaemykh magnetronnym raspyleniem [Features of formation of thin silicon coatings deposited
by magnetron sputtering], Doklady Natsional'noy akademii nauk Belarusi [Doklady of
the National Academy of Sciences of Belarus], 2017, Vol. 61, No. 6, pp. 35-41.
15. Volochko A.T, Zelenin V.A., Mel'nik N.Yu. Splavy sistemy Cr-Ni-Si dlya polucheniya
rezistivnykh elementov integral'nykh mikroskhem metodom magnetronnogo raspyleniya [Alloys
of the Cr–Ni–Si system for obtaining resistive elements of integrated microcircuits by
magnetron sputtering], Izvestiya Natsional'noy akademii nauk Belarusi. Seriya fizikotekhnicheskikh
nauk [Proceedings of the National Academy of Sciences of Belarus. Physicaltechnical
series], 2020, Vol. 65, No. 1, pp. 35-42.
16. Velichko A.A., Ilyushin V.A., Filimonova N.I., Krupin A.Yu., Katsyuba A.V. Tenzorezistory na
strukturakh "kremniy na sapfire" (KNS) i Si/CaF2/Si [Tenzoresistors based on silicon and
Si/CaF2/Si on sapphire structures], Doklady Akademii nauk vysshey shkoly Rossiyskoy
Federatsii [Proceedings of the Russian Higher School Academy of Sciences], 2018, No. 2
(39), pp. 30-39.
17. Lapin A.P., Gayfulin N.M., Suleymanova L.N., Yunusova G.R. Metodika izucheniya
fizicheskikh effektov, ispol'zuemykh dlya izmereniya davleniya [Method of Studying Physical
Effects and Phenomena in the Measurement of Pressure], Vestnik Yuzhno-Ural'skogo
gosudarstvennogo universiteta. Seriya: Komp'yuternye tekhnologii, upravlenie, radioelektronika
[Bulletin of the South Ural State University. Ser. Computer Technologies, Automatic
Control, Radio Electronics], 2019, Vol. 19, No. 1, pp. 160-168.
18. Komolikov Yu.I., Kashcheev I.D., Khrustov V.R. Termicheskoe rasshirenie kompozitsionnoy
keramiki sistemy dioksid tsirkoniya ‒ oksid alyuminiya [Thermal expansion of composite ceramics
of the system zirconium dioxide – aluminum oxide], Novye ogneupory [Novye
ogneupory], 2016, No. 9, pp. 59-62.
19. Stuchebnikov V.M., Ustinov A.A., Nagornov Yu.S. Issledovanie temperaturnogo dreyfa i
nelineynostey tenzopreobrazovateley davleniya na osnove keramiki [Study of temperature drift
and nonlinearities of pressure strain gauges based on ceramics], Izvestiya vysshikh uchebnykh
zavedeniy. Povolzhskiy region. Tekhnicheskie nauki [University proceedings. Volga region.
Technical sciences], 2010, No. 2 (14), pp. 62-69.
20. Sokolov. V.I. Tsentrifugirovanie [Centrifugation]. Moscow: Khimiya, 1976, 408 p.
21. Panfilova E.V., Grishaev N.A. Otrabotka i issledovanie protsessa polucheniya fotonnokristallicheskikh
plenok metodom tsentrifugirovaniya [Development and study of the process
of photonic-crystal film depositing by centrifugation], Inzhenernyy zhurnal: nauka i innovatsii
[Engineering Journal: Science and Innovation], 2021, No. 4 (112).
22. Klunnikova Yu.V., Bondarchuk D.A. Formirovanie spaya steklovidnogo dielektrika i sapfira
dlya elementov mikroelektroniki [Junction formation of glassy dielectric and sapphire for microelectronic
elements], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering
Sciences], 2018, pp. 67-73.
tenzodatchika na strukture «kremniy na sapfire»: diss. … kand. tekh. Nauk [Development of a
method for calculating and designing an elastic element of a strain gauge on the structure "silicon
on sapphire": cand. of eng. sc. diss.]: 01.02.06. Moscow: Moskovskiy politekhnicheskiy
universitet, 2019.
2. Khoshev A.V. Tenzorezistivnye plenki i ikh primenenie v datchikakh davleniya [Tensoresistive
thin films and their use in pressure sensors], Sovremennaya tekhnika i tekhnologii [Modern
technics and technologies], 2014, No. 10.
3. Mikhaylov P.G., Mokrov E.A., Sergeev D.A., Skotnikov V.V., Petrin V.A., Chernetsov M.A.
Chuvstvitel'nye elementy vysokotemperaturnykh datchikov davleniya. Materialy i tekhnologii
izgotovleniya [Sensitive elements of high- pressure sensors. Materials and technologies
izgogovleniya], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering Sciences],
2014, No. 4 (153), pp. 204-213.
4. Ustinov A.A., Nagornov Yu.S., Kozlov A.I. Sravnitel'nye kharakteristiki odnosloynykh i
dvukhsloynykh tenzopreobrazovateley davleniya na osnove struktur kremniy–na–sapfire [Comparative
characteristics of single-layer and double-layer pressure transducers based on silicon-onsapphire
structures], Izvestiya vysshikh uchebnykh zavedeniy. Materialy elektronnoy tekhniki
[Izvestiya vysshykh uchebnykh zavedeniy. Materialy electronnoy tekhniki], 2012, No. 1, pp. 66-67.
5. Konovalov R.S., L'vov A.A. Vysokotemperaturnye datchiki davleniya [High temperature pressure
sensors], Tr. mezhdunarodnogo simpoziuma "Nadezhnost' i kachestvo" [International
Sympozium "Reliability and quality"], 2014, Vol. 2, pp. 48-50.
6. Gurin S.A., Pecherskaya E.A., Zinchenko T.O., Fimin A.V., Nikolaev K.O. Konstruktsii i
tekhnologicheskie rezhimy formirovaniya chuvstvitel'nykh elementov mikroelektronnykh
datchikov bystroperemennogo i staticheskogo davleniya [Structures and technological regimes
of forming sensitive elements of microelectronic sensors of fast alternating and static pressure],
Izmerenie. Monitoring. Upravlenie. Kontrol' [Measuring. Monitoring. Management.
Control], 2019, No. 3 (29), pp. 111-118.
7. Mikhaylov P.G., Smogunov V.V., Vol'nikov M.I. Tekhnologii formirovaniya geterostruktur
izmeritel'nykh preobrazovateley [Technologies for heterostruktures formation of transducer],
Izvestiya vysshikh uchebnykh zavedeniy. Povolzhskiy region. Tekhnicheskie nauki [University
proceedings. Volga region. Technical sciences], 2020, No. 3 (55), pp. 58-67.
8. Shokorov V.A., Smirnov I.I. Razrabotka i primenenie vysokotemperaturnykh datchikov
davleniya dlya reaktivnykh dvigateley raketno-kosmicheskoy tekhniki [Development and application
of high-temperature pressure sensors for jet engines of rocket and space technology],
Tr. mezhdunarodnogo simpoziuma "Nadezhnost' i kachestvo" [International Sympozium "Reliability
and quality"], 2018, Vol. 2, pp. 60-62.
9. Berlin E.V., Seydman L.A. Poluchenie tonkikh plenok reaktivnym magnetronnym raspyleniem
[Preparation of thin films by reactive magnetron sputtering]. 2nd ed., corr. and suppl. URSS,
2022, 316 p. ISBN 978-5-9710-9680-1.
10. Vasil'ev V.A., Khoshev A.V. Primenenie magnetronnogo raspyleniya dlya polucheniya tonkikh
plenok geterogennykh struktur nano- i mikroelektromekhanicheskikh sistem [Application of
magnetron sputtering to obtain thin films of heterogeneous structures of nano- and
microelectromechanical systems], Fundamental'nye problemy radioelektronnogo
priborostroeniya [Fundamental problems of radio-electronic instrumentation], 2014, Vol. 14,
No. 3, pp. 144-147.
11. Goncarov E, Saaenko A., Malyukov S., Palii A. Formation of ITO Thin Films by MF Magnetron
Sputtering for Solar Cells Application, Processing of ITNT 2021 – 7th IEEE International
Conference on Information Technology and Nanotechnology, 2021.
12. Danilina T.I., Troyan P.E., Sakharov Yu.V., Zhidik Yu.S. Ionno-plazmennye metody polucheniya
nanostruktur [Ion-plasma methods to obtain nanostructures], Doklady Tomskogo
gosudarstvennogo universiteta sistem upravleniya i radioelektroniki [Proceedings of TUSUR
University], 2017, Vol. 20, No. 3, pp. 40-45.
13. Kolobov N.A., Shelegeda E.V. Issledovanie poperechnoy provodimosti plenok
polikristallicheskogo kremniya, poluchennykh metodom magnetronnogo raspyleniya [Investigation
of the transverse conductivity of polycrystalline silicon films obtained by magnetron
sputtering], Kratkie soobshcheniya po fizike FIAN [Bulletin of the Lebedev Physics Institute],
2012, No. 5, pp. 28-37.
14. Klimovich I.M., Romanov I.A., Komarov F.F., Zaykov V.A., Vlasukova L.A, Osin Yu.N., Rogov
A.M., Vorob'ev V.V., Stepanov A.L. Osobennosti formirovaniya tonkikh plenok kremniya,
osazhdaemykh magnetronnym raspyleniem [Features of formation of thin silicon coatings deposited
by magnetron sputtering], Doklady Natsional'noy akademii nauk Belarusi [Doklady of
the National Academy of Sciences of Belarus], 2017, Vol. 61, No. 6, pp. 35-41.
15. Volochko A.T, Zelenin V.A., Mel'nik N.Yu. Splavy sistemy Cr-Ni-Si dlya polucheniya
rezistivnykh elementov integral'nykh mikroskhem metodom magnetronnogo raspyleniya [Alloys
of the Cr–Ni–Si system for obtaining resistive elements of integrated microcircuits by
magnetron sputtering], Izvestiya Natsional'noy akademii nauk Belarusi. Seriya fizikotekhnicheskikh
nauk [Proceedings of the National Academy of Sciences of Belarus. Physicaltechnical
series], 2020, Vol. 65, No. 1, pp. 35-42.
16. Velichko A.A., Ilyushin V.A., Filimonova N.I., Krupin A.Yu., Katsyuba A.V. Tenzorezistory na
strukturakh "kremniy na sapfire" (KNS) i Si/CaF2/Si [Tenzoresistors based on silicon and
Si/CaF2/Si on sapphire structures], Doklady Akademii nauk vysshey shkoly Rossiyskoy
Federatsii [Proceedings of the Russian Higher School Academy of Sciences], 2018, No. 2
(39), pp. 30-39.
17. Lapin A.P., Gayfulin N.M., Suleymanova L.N., Yunusova G.R. Metodika izucheniya
fizicheskikh effektov, ispol'zuemykh dlya izmereniya davleniya [Method of Studying Physical
Effects and Phenomena in the Measurement of Pressure], Vestnik Yuzhno-Ural'skogo
gosudarstvennogo universiteta. Seriya: Komp'yuternye tekhnologii, upravlenie, radioelektronika
[Bulletin of the South Ural State University. Ser. Computer Technologies, Automatic
Control, Radio Electronics], 2019, Vol. 19, No. 1, pp. 160-168.
18. Komolikov Yu.I., Kashcheev I.D., Khrustov V.R. Termicheskoe rasshirenie kompozitsionnoy
keramiki sistemy dioksid tsirkoniya ‒ oksid alyuminiya [Thermal expansion of composite ceramics
of the system zirconium dioxide – aluminum oxide], Novye ogneupory [Novye
ogneupory], 2016, No. 9, pp. 59-62.
19. Stuchebnikov V.M., Ustinov A.A., Nagornov Yu.S. Issledovanie temperaturnogo dreyfa i
nelineynostey tenzopreobrazovateley davleniya na osnove keramiki [Study of temperature drift
and nonlinearities of pressure strain gauges based on ceramics], Izvestiya vysshikh uchebnykh
zavedeniy. Povolzhskiy region. Tekhnicheskie nauki [University proceedings. Volga region.
Technical sciences], 2010, No. 2 (14), pp. 62-69.
20. Sokolov. V.I. Tsentrifugirovanie [Centrifugation]. Moscow: Khimiya, 1976, 408 p.
21. Panfilova E.V., Grishaev N.A. Otrabotka i issledovanie protsessa polucheniya fotonnokristallicheskikh
plenok metodom tsentrifugirovaniya [Development and study of the process
of photonic-crystal film depositing by centrifugation], Inzhenernyy zhurnal: nauka i innovatsii
[Engineering Journal: Science and Innovation], 2021, No. 4 (112).
22. Klunnikova Yu.V., Bondarchuk D.A. Formirovanie spaya steklovidnogo dielektrika i sapfira
dlya elementov mikroelektroniki [Junction formation of glassy dielectric and sapphire for microelectronic
elements], Izvestiya YuFU. Tekhnicheskie nauki [Izvestiya SFedU. Engineering
Sciences], 2018, pp. 67-73.
Опубликован
2023-06-07
Выпуск
Раздел
РАЗДЕЛ II. ЭЛЕКТРОНИКА, НАНОТЕХНОЛОГИИ И ПРИБОРОСТРОЕНИЕ
