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• STUDY OF RESISTIVE SWITCHING OF TRANSPARENT ZINC OXIDE MEMRISTIVE STRUCTURES FOR MACHINE VISION OF ROBOTIC SYSTEMS

  А.V. Saenko , К.А. Kozyumenko , I.А. Shikhovtsov , R. V. Tominov , V.А. Smirnov

  2026-02-27

  Abstract ▼

  The development of neuromorphic machine vision systems for robotic systems requires the creation of transparent memristive structures that combine optical transparency, stable bipolar resistive switching, and compatibility with crossbar array technology. A key challenge is to establish patterns in the influence of ZnO thin film deposition modes on their structural and electrical properties, which determine the characteristics of memristive structures. The aim of this study was to determine the optimal RF magnetron sputtering power for a ZnO ceramic target, ensuring the formation of transparent ITO/ZnO/ITO memristive structures with stable resistive switching, and to create a crossbar array based on these structures. ZnO thin films were deposited using RF magnetron sputtering at powers ranging from 25 to 100 W. Structural (SEM, AFM) and electrical (Hall effect) studies of the resulting ZnO films were conducted. Transparent ITO/ZnO/ITO memristive structures and a crossbar array of 16 structures with a cell size of 2000 × 2000 nm were fabricated on glass substrates using magnetron sputtering and lithography, and their current-voltage characteristics were measured. Increasing the magnetron sputtering power from 25 to 100 W resulted in an increase in the grain size from 12,8 to 35,7 nm and in the surface roughness of the ZnO films from 2,8 to 11,4 nm. At a sputtering power of 75 W, the charge carrier concentration in the ZnO films reached a maximum value of 2.7 × 1015 cm-3, which is necessary for stable resistive switching of the structure. The obtained ITO/ZnO/ITO memristive structures were shown to exhibit stable bipolar switching for 1000 cycles between the states HRS = 537,4 ± 26,7 Ohm and LRS = 291,4 ± 38,5 Ohm (HRS/LRS ratio ~ 1,8). The fabricated transparent crossbar array showed stable resistive switching for 20000 cycles (LRS = 13,8 ± 1,4 kOhm, HRS = 34,8 ± 2,6 kOhm, HRS/LRS ratio ~ 2,5). The obtained results can be used in the development of technological processes for the fabrication of transparent memristor crossbars for neuromorphic structures of machine vision in robotic systems

• FORMATION AND INVESTIGATION OF DOPED ZINC OXIDE MEMRISTIVE FILMS FOR MACHINE VISION SYSTEMS OF ROBOTIC COMPLEXES

  Z. Е. Vakulov , R.V. Tominov , Д.A. Dzyuba , V.А. Smirnov

  116-123

  2025-11-10

  Abstract ▼

  The results of investigation of the influence of synthesis modes of doped zinc oxide thin films by pulsed laser deposition on their morphological and electrophysical characteristics are presented. Experimental studies of the influence of dimensional effects on the parameters of resistive switching of memristor structures based on thin films of doped zinc oxide have been carried out. The relationship between the morphological parameters of the films, their thickness and resistive switching characteristics has been established. The results showing how thickness, surface roughness and average grain diameter influence the ratio of resistance in the high-resistance and low-resistance states, as well as the switching voltages U_set and U_res have been obtained. It is shown that an increase in the thickness of gallium-doped zinc oxide films leads to an increase in the Uset and Ures voltages, while the dependence of the resistance ratio in the high-resistance and low-resistance states has a complex character, with a maximum observed at a film thickness of about 30 nm. The obtained results allow us to estimate the degree of influence of structural and morphological parameters of doped zinc oxide films on the resistive switching effect in them, and also to formulate recommendations for obtaining these films with the required resistive switching parameters. It was found that increasing the thickness of gallium-doped zinc oxide films from 11.8±5.1 nm to 55.1±18.4 nm it is possible to change the value of charge carriers concentration from (2.84±0.22)∙1019 cm-3 to (1.42±0.13)∙10²⁰ cm^-3, as well as the mobility of charge carriers from 54.48±4.07 cm²/(V∙s) to 18.77±0.83 cm²/(V∙s). At the same time, increasing the thickness of gallium-doped zinc oxide films also leads to an increase in resistance in the high-resistance state from 1.38±0.11 MΩ to 62.59±5.4 MΩ and resistance in the low-resistance state from 0.005±0.001 MΩ to 0.041±0.002 MΩ. The results obtained can be used in the development of physical principles of creation of electronic component base of artificial intelligence systems for manufacturing new devices and devices of nanoelectronics and adaptive neuromorphic systems

• INVESTIGATION OF MEMRISTIVE NANOSCALE STRUCTURES WITH PROFILED INTERFACEFOR NEUROMORPHIC ELECTRONICS

  I.L. Jityaev, М. S. Kartel, Y.Y. Jityaeva, А. А. Avakyan, V. А. Smirnov

  2025-04-27

  Abstract ▼

  The article presents the results of the development of nanoscale memristive structures, the application
  of which is promising for the hardware implementation of artificial intelligence systems. A design of a
  memristive cell based on a titanium oxide film with a thickness ranging from 3 to 50 nm is proposed.
  The upper electrode of the cell features a profiled structure in the form of two high-aspect-ratio nanoscale
  tip structures (HANTS), where one tip has a radius of 10 nm, and the radius of the second tip varies in the
  range of 10 to 50 nm. Platinum was chosen as the material for the upper electrode due to its unique physicochemical
  properties, including high chemical inertness across a wide range of temperatures and aggressive
  environments, low electrical resistivity, and resistance to oxidation. These characteristics make
  platinum an optimal material for use in electronic devices and sensor systems where long-term stability
  and minimal energy losses during signal transmission are required. The results of modeling the electric
  field strength distribution in the interelectrode gap of the memristive cell are presented. The modeling was performed using COMSOL Multiphysics software, which solves systems of nonlinear partial differential
  equations using the finite element method, with a potential difference of 5 V between the electrodes. Based
  on the modeling results, the dependencies of the electric field strength on the geometric parameters of the
  memristive cell were obtained and analyzed. Local enhancement of the electric field strength was identified
  along the perimeter of the oxide-HANTS interface. The increase in the non-uniformity of the electric
  field strength grows with the thickness of the oxide film and can reach 13.4%. The obtained results can be
  used in the development of neuromorphic electronic components for robotic systems and artificial intelligence
  systems based on memristors