FUNDAMENTALS OF DESIGNING HIGH-TEMPERATURE ANALOGIC MICROSCIRCUIT ON WIDE-GAP SEMICONDUCTORS (REVIEW)

Abstract

An analytical review of promising technological processes for high-temperature analog microcircuits,
which are in demand in space, aviation and automotive instrumentation, petrochemical
industry, electric power industry, military electronics, medicine, etc., is presented. The problems
of designing microcircuits of this class based on wide-gap semiconductors (silicon carbide
(SiC), gallium nitride (GaN), gallium arsenide (GaAs)) that provide a wide range of operating
temperatures (-200°С…+500°С). Currently, "low-current" circuitry based on SiC, GaN, GaAs
wide-gap semiconductors for operation at high temperatures is extremely undeveloped, which
does not allow designing new-generation analog products in the interests of Russian enterprises.
Today, many topical issues of SiC, GaN, GaAs high-temperature circuitry and dynamics have not
been resolved. Therefore, it is necessary to study structural and technological solutions, as well as
heat removal. In this regard, the article analyzes the problems of designing microcircuits of these
classes. At the same time, one should take into account the limitations of technological processes, which, in many cases, allow creating only the same type of active elements, which makes it difficult
to build microcircuits. The relevance of the above studies is related to the problems of import substitution
under the conditions of sanctions, when the purchase of an electronic component base for
responsible use from foreign firms becomes unavailable. Russian recommendations are needed on
the development of rules for designing analog interface microcircuits (operational and differential
difference amplifiers, transimpedance and charge-sensitive amplifiers, compensation voltage stabilizers
and buffer amplifiers, current conveyors, etc.) for the tasks of processing signals from
sensors of physical quantities in the high temperature range (+150 °С ... +500°С).