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• STUDY OF THE MODES OF FORMING ZnO: Ga NANOCRYSTALLINE FILMS BY MAGNETRON SPUTTERING

  А. А. Geldash, L.E. Levenets, E.Y. Gusev, V.N. Dzhuplin

  2020-07-20

  Abstract ▼

  The main goal of this work is to study the modes of formation of thin nanocrystalline ZnO:
  Ga films by direct current magnetron sputtering. The main objective of the study is to obtain thin
  (~ 300 nm), transparent, conductive films with a resistivity value of less than 5 · 10-3 Ohm · cm,
  which can be used as contacts for nanostructures of photosensitive elements, as well as studying
  the technological parameters of magnetron sputtering equipment and metal oxide targets. The
  morphology of the resulting thin ZnO: Ga films was studied. As a result of the study, it was revealed
  that the surface of the films consists of individual crystals, united together during the deposition
  of the material. These crystals have pronounced faces and peaks. It was also revealed that
  with an increase in the power of a direct current source, the crystals on the film surface increase
  several times in proportion to the increase in power, and the film thickness increases due to anincrease in the speed of sputtering of the target material on the substrate. Further, the electrical
  characteristics of the obtained films were investigated and the dependences of the influence of the
  power (thickness) of the film on the carrier concentration, their mobility, and also resistivity were
  derived. Thus, it was revealed that with an increase in the film thickness from 320 nm to 340 nm, the
  mobility of current carriers increases from 3.027 cm2/(V·s) to 3.228 cm2/(V·s), and with an increase
  in the film thickness from 800 nm to 1200 nm of current carriers increases from 6.511 cm2/(V·s) to
  6.547 cm2/(V·s). With an increase in the film thickness from 320 nm to 340 nm, the concentration of
  current carriers decreases from 1.571·1020 cm– 3 to 1.489·1020 cm– 3, and with an increase in the film
  thickness from 800 nm to 1200 nm, the concentration of current carriers decreases from 2.481·1020
  cm-3 to 1.653·1020 cm-3. As the film thickness increases from 320 nm to 340 nm, the resistivity increases
  from 1.303·10-2 Ω·cm to 1.38 ·10-2 Ω·cm. and as the film thickness increases from 800 nm to
  1200 nm, the resistivity increases from 3.851·10-2 Ω·cm to 5.779·10-2 Ω·cm.