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• FEATURES OF LOW-VOLTAGE DIGITAL CIRCUITS BASED ON CMOS TECHNOLOGIES 90–20 NM

  B.G. Konoplev

  174-181

  2025-10-01

  Abstract ▼

  To increase energy efficiency, CMOS integrated circuits use a subthreshold mode of operation.
  The supply voltage decreases to a level lower than the threshold voltages of the MOSFETs, currents decrease and performance decreases. However, often a reduction in power consumption is more important than low performance. Therefore, CMOS integrated circuits in the subthreshold mode have applications where a radical reduction in power consumption is a crucial requirement. Now firms have used technologies with minimum sizes from 500 to 3 nm, with most of the products being at the 90–20 nm. The paper analyzes low-voltage circuits based on technologies 90–20 nm to develop recommendations for the design of energy-efficient devices. A technique for determining the key parameters of predictive MOSFET models in the subthreshold mode is considered. Expressions of the characteristics of inverter in the subthreshold region are obtained. Analysis shows a significant deterioration in the characteristics of CMOS elements in the subthreshold mode with a decrease in the dimensions of less than 90 nm. It is explained that when developing technology 90–20 nm, all measures were aimed at reducing leakage currents in the over threshold mode to reduce static power consumption. To improve the characteristics of CMOS elements in the subthreshold mode, it is necessary to optimize the design and technology to reduce the values of the subthreshold span, the DIBL coefficient and increase the characteristic current. The results may be useful for developers of energy-efficient equipment.

• RECTENNA MODEL BASED ON MOSFETS FOR MICROWAVE ENERGY HARVESTING AT ULTRA-LOW POWER LEVELS

  B.G. Konoplev

  2025-01-14

  Abstract ▼

  For wireless and battery-free power supply of autonomous devices with low power consumption harvesting
  of radio frequency energy from the environment is increasingly used: energy from cellular stations,
  radio stations, microwave ovens, Wi-Fi, Bluetooth, etc. To convert the collected energy into a DC voltage,
  devices consisting of an antenna, a rectifier and an impedance matching circuit of the antenna and the rectifier,
  called rectennas, are used. The power density of the electromagnetic field can be very small: from hundreds
  of microwatts to tens of picowatts per cm2. Therefore, the task of developing rectennas capable of operating
  at ultra-low power levels is urgent. The parameters of components of the rectenna (antenna, impedance
  matching circuit, rectifier) are strongly interconnected, therefore, to obtain optimal characteristics, it is
  necessary to design the rectenna considering the mutual influence of all components and use appropriate
  models. The paper analyzes the features of the construction and development of a rectenna model based on
  MOSFETs for operation at ultra-low power levels. Expressions for estimating the output voltage of the
  recntenna are obtained, considering the basic parameters of the antenna, the rectifier/voltage multiplier and
  the impedance matching circuit. Calculations based on the obtained expressions and modeling are performed
  for a typical 90 nm CMOS technology. The possibility of constructing rectennas based on MOSFETs at ultralow
  power levels up to -50 dBm is shown. Recommendations are given on the choice of technological and
  design parameters of rectennas for harvesting microwave energy.

• ANALYSIS OF THE RECTIFYING PROPERTIES OF NANOMETER MOS TRANSISTORS IN A DIODE CONNECTION AT ULTRALOW VOLTAGE

  B.G. Konoplev

  2024-05-28

  Abstract ▼

  Advances in microelectronics, especially the development of CMOS technology, have made it possible
  to create devices with extremely low power consumption. This made it possible to develop autonomous
  wireless devices that, using radio waves, not only receive, process, and transmit information, but also
  receive power from the terminals. For wireless and battery-free power supply, harvesting of radio frequency
  energy from the environment can be used: radiation energy from cellular stations, radio and television
  stations, microwave ovens, Wi-Fi, Bluetooth, and other sources. To convert radio frequency energy
  into supply voltage, rectifiers based on nanometer diode-connected MOSFETs are most often used. When
  wireless powered devices are located far from the terminal or harvest energy from the environment, the
  power density of the electromagnetic field and therefore the amplitude of the input voltage can be quite
  small. The urgent task is to develop and study such devices capable of operating at very low input voltages. The purpose of the study is to analyze the rectifying properties of diodes based on nanometer
  MOSFETs in weak inversion mode at ultra-low input voltages and to develop recommendations for the
  choice of technology and design of microcircuits with wireless power. Expressions are obtained for estimating
  the rectification coefficients of diodes in terms of current and power. Calculations using the obtained
  expressions and modeling using the BSIM4v4.8.2 model of current-voltage characteristics and
  dependences of diode rectification coefficients for current and power on voltage for a typical 90 nm
  CMOS technology were performed. The possibility of constructing rectifiers based on MOSFETs at ultralow
  voltages down to units of mV has been demonstrated. Recommendations are given for justifying technological
  and design parameters when designing modules for converting and harvesting energy of wireless
  devices.

• INTEGRATED VOLTAGE RECTIFIER-MULTIPLIER FOR SUPPLYING LOW-POWER WIRELESS PASSIVE MICRODEVICES

  А.S. Sinyukin, B.G. Konoplev, А.V. Kovalev

  2023-10-23

  Abstract ▼

  Concerning automation technologies development and their deployment to logistics, commerce,
  industry, constructional engineering and other economy sectors, wireless systems get more
  widespread due to their convenience and availability. Most of the time miniature devices able to
  perform operations of identification, ambient parameters measure, receive and transmit of signals
  are used in such systems. In return, there are number of areas, in which battery devices using is
  limited since a change of a low battery is not always feasible and viable. The passive devices gathering
  energy for operation through radiofrequency radiation receiving by antenna from the environment
  could be utilized in such applications. The integrated implementation of microcircuit is
  required for mass production of suchlike inexpensive devices. The voltage rectifier with multiplication
  function is the key module of these microcircuits supply unit. Results of the voltage rectifiersmultipliers
  design using typical CMOS processes CM018G 180 nm and HCMOS8D 180 nm and
  Cadence IC CAD are presented in the work. Degree of threshold voltage and number of stages
  influence on the multipliers output characteristics is considered. It is shown, that in eight-stages
  multiplier constructed with HCMOS8D process, output voltage needed for supply of wireless device
  microcircuit is reached at input voltage amplitude of 375 mV, and in sixteen-stages multiplier
  - at 300 mV amplitude. The proposed rectifier-multipliers could be used at power supplies design
  of the wireless passive devices.