STUDY OF RESISTIVE SWITCHING OF TRANSPARENT ZINC OXIDE MEMRISTIVE STRUCTURES FOR MACHINE VISION OF ROBOTIC SYSTEMS
DOI:
https://doi.org/10.18522/2311-3103-2026-1-%25pKeywords:
Nanomaterials, ZnO thin films, RF magnetron sputtering, structural properties, neuromorphic systems, machine vision, transparent memristor, resistive switchingAbstract
The development of neuromorphic machine vision systems for robotic systems requires the creation of transparent memristive structures that combine optical transparency, stable bipolar resistive switching, and compatibility with crossbar array technology. A key challenge is to establish patterns in the influence of ZnO thin film deposition modes on their structural and electrical properties, which determine the characteristics of memristive structures. The aim of this study was to determine the optimal RF magnetron sputtering power for a ZnO ceramic target, ensuring the formation of transparent ITO/ZnO/ITO memristive structures with stable resistive switching, and to create a crossbar array based on these structures. ZnO thin films were deposited using RF magnetron sputtering at powers ranging from 25 to 100 W. Structural (SEM, AFM) and electrical (Hall effect) studies of the resulting ZnO films were conducted. Transparent ITO/ZnO/ITO memristive structures and a crossbar array of 16 structures with a cell size of 2000 × 2000 nm were fabricated on glass substrates using magnetron sputtering and lithography, and their current-voltage characteristics were measured. Increasing the magnetron sputtering power from 25 to 100 W resulted in an increase in the grain size from 12,8 to 35,7 nm and in the surface roughness of the ZnO films from 2,8 to 11,4 nm. At a sputtering power of 75 W, the charge carrier concentration in the ZnO films reached a maximum value of 2.7 × 1015 cm-3, which is necessary for stable resistive switching of the structure. The obtained ITO/ZnO/ITO memristive structures were shown to exhibit stable bipolar switching for 1000 cycles between the states HRS = 537,4 ± 26,7 Ohm and LRS = 291,4 ± 38,5 Ohm (HRS/LRS ratio ~ 1,8). The fabricated transparent crossbar array showed stable resistive switching for 20000 cycles (LRS = 13,8 ± 1,4 kOhm, HRS = 34,8 ± 2,6 kOhm, HRS/LRS ratio ~ 2,5). The obtained results can be used in the development of technological processes for the fabrication of transparent memristor crossbars for neuromorphic structures of machine vision in robotic systems
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