Article

Article title PHYSICAL-TOPOLOGICAL MODELLING OF IMAGE SENSOTS RESOLUTION
Authors G.A. Ivanova, А.А. Pugachev, D.V. Puzyrkov, A.N. Schelokov
Section SECTION IV. ELECTRONICS AND NANOTECHNOLOGY
Month, Year 02, 2015 @en
Index UDC 621.3.049.771.14
DOI
Abstract The resolution is the main parameter of image sensors, and the modulation transfer function (MTF) is main figure of merit of resolution. The paper is about the new method for resolution modeling based on physical-topological simulation of photogenerated carriers distribution in pixels. This model established the direct dependence between resolution and topological end technological parameters such us doses and energies of implantation and parameters of termodiffusion stages with time-dependence from other conditions. The model gives new aids for photosensor design and overcomes restrictions of analytical resolution models. The numerous investigations of real CCD and CMOS APS pixels output signal modulation for different shapes of test input signals for geometrical MTF and technological-device modeling for diffusion MTF component are provided. The simulation results confirm the universal character of the MTF calculation method. The method was applied for practical design of numerous CCD image sensors.

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Keywords Modulation transfer function; matrix image sensor; image sampling; CCD design.
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