Article

Article title MODELING AND DESIGN OF SILICON SENSORS CAPACITIVE PRESSURE SENSORS
Authors P.G. Mikhailov, V.I. Lapshin, D.A. Sergeev
Section SECTION II. MATHEMATICAL MODELS AND METHODS
Month, Year 05, 2013 @en
Index UDC 681.5.017; 681.5.03.23
DOI
Abstract The article deals with modeling and design of silicon sensors (SE) of capacitive pressure sensors.Models and designs are a number of capacitive sensing elements made of single-crystal silicon (MC). Manufacture of capacitive Jae-based MC, who is also the structural and functional materials that can produce them with the use of group technology in microelectronics. This, in turn, can dramatically reduce the cost and reduce the size and weight of the SE and the sensors themselves. Calculated according to the design parameters, which directly affect the metrology capacitive sensors.

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Keywords Monocrystalline silicon; micro-electronic sensors; capacitive sensor element; electrodes; calculation model; voltage, membrane; operating capacity; micromachined capacitive sensor; the measurement range.
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